Nonreciprocal acoustoelectric interaction of surface waves and fluorine plasma-treated AlGan/GaN 2DEG
Nonreciprocal acoustoelectric interaction of surface waves and fluorine plasma-treated AlGan/GaN 2DEG
复制标题
表面波与氟等离子体处理的 AlGan/GaN 2DEG 的非互易声电相互作用
DOI：
--
复制
发表时间：
2017
期刊：
影响因子：
--
通讯作者：
D. Weinstein
中科院分区：
文献类型：
--
作者：
Siddhartha Ghosh;T. Hancock;M. Storey;L. Parameswaran;M. Geis;R. Ralston;D. Weinstein
本文演示了表面声波（saw）在AlGaN/GaN 2DEG中传播的声电（AE）效应，其中氟基等离子体用于调节载流子浓度。在AlGaN阻挡层中掺入氟离子可以降低二维层中的载流子密度，这是防止压电场屏蔽所必需的。对于共制HEMT结构，还观察到2DEG通道的调谐与阈值电压的渐进移动。该单片增益器件在728 MHz和1.48 GHz的蓝宝石上GaN的高阶瑞利模式下，在施加直流偏置下表现出非倒数插入损耗。这是在具有高片密度的二维半导体中实现声发射增益所需的载流子控制的第一步。
This paper demonstrates acoustoelectric (AE) effects for surface acoustic waves (SAWs) propagating in an AlGaN/GaN 2DEG, where a fluorine based plasma has been used to tune the carrier concentration. Incorporation of fluorine ions in the AlGaN barrier is shown to reduce sheet carrier density in the 2D layer, which is required to prevent screening of piezoelectric fields. Tuning of the 2DEG channel is also observed with a progressive shift of the threshold voltage for co-fabricated HEMT structures. The monolithic gain devices exhibit nonreciprocal insertion losses under applied DC bias for higher-order Rayleigh modes in GaN on sapphire at 728 MHz and 1.48 GHz. This constitutes a first step in implementing the carrier control required for AE gain in 2D semiconductors with intrinsically high sheet density.