Analytical Model and New Structure of the Variable-k Dielectric Trench LDMOS With Improved Breakdown Voltage and Specific ON-Resistance
Analytical Model and New Structure of the Variable-k Dielectric Trench LDMOS With Improved Breakdown Voltage and Specific ON-Resistance
复制标题
具有改进击穿电压和比导通电阻的可变介电常数沟槽LDMOS的解析模型和新结构
DOI：
10.1109/ted.2015.2466694
复制
发表时间：
2015-10-01
影响因子：
3.1
通讯作者：
Zhang, Bo
中科院分区：
文献类型：
--
作者：
Zhou, Kun;Luo, Xiaorong;Zhang, Bo
A novel Silicon-on-Insulator laterally double-diffused metal-oxide-semiconductor transistor with ultralow specific ON-resistance (R-ON,R-sp) is proposed, and its analytical model for the breakdown voltage (BV) is presented. The device features a variable-k dielectric trench and a p-pillar beside the trench (VK-P). First, the VK trench induces additional field peaks and thus significantly increases the average electric field (E-field) strength. Second, the low-k dielectric in the upper trench leads to a high E-field strength, enabling a shortened device pitch to support the high BV. Third, the p-pillar extending from the p-body to the trench bottom not only acts as the vertical junction termination extension, but also forms the enhanced vertical reduced surface field effect, which further modulates the E-field distribution and increases the drift doping concentration. The BV and R-ON,(sp) are, therefore, greatly improved. At 600 V class BV, the VK-P LDMOS reduces the R-ON,R-sp by 54% compared with the uniform-k trench LDMOS. An analytical BV model taking account of influence of the VK dielectric trench is presented for the first time. The analytical results agree well with the simulated results.
