Experimental study on the activation process of GaAs spin-polarized electron source
Experimental study on the activation process of GaAs spin-polarized electron source
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DOI：
10.1088/1009-1963/12/5/304
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发表时间：
2003-05
期刊：
影响因子：
--
通讯作者：
Cun-Jun Ruan
中科院分区：
文献类型：
--
作者：
Cun-Jun Ruan
GaAs spin-polarized electron source is a new kind of electron source, where the GaAs semiconductor crystal is used as a photocathode under the irradiation of helicity light. In this paper the activation process of the GaAs spin-polarized electron source is investigated experimentally in detail, during which the negative electron affinity of the photo cathode should be achieved more carefully by absorbing the caesium and oxygen on the surface of the GaAs crystal under ultrahigh vacuum conditions. Besides the different activation processes, the important physical parameters are studied to achieve the optimum activation results. At the same time the stability and lifetime of the polarized electron beam are explored for future experiments. Some important experimental data have been acquired.
