Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C
Leakage‐Current Increase in Amorphous Ta2 O 5 Films Due to Pinhole Growth during Annealing Below 600°C
复制标题
600°C 以下退火期间由于针孔生长导致非晶 Ta2 O 5 薄膜漏电流增加
DOI：
10.1149/1.2119599
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发表时间：
1983
影响因子：
3.9
通讯作者：
K. Mukai
中科院分区：
文献类型：
--
作者：
S. Kimura;Y. Nishioka;A. Shintani;K. Mukai
研究了在400/sup 0/-1000/sup0/C范围内高温退火对反应溅射沉积的五氧化二钽（Ta/sub 2/O/sub 5/）薄膜漏电流的影响。多晶Ta/sub 2/O/sub 5/薄膜在70 0/sup 0/C以上退火时的漏电流比沉积态非晶薄膜的漏电流大10/sup 7/-10/sup 8/倍。然而，在600/sup 0/C退火的Ta/sub 2/O/sub 5/薄膜中，即使薄膜还没有再结晶，漏电流也急剧增加。TEM观察表明，在600/sup 0/C退火的Ta/sub 2/O/sub 5/薄膜中，在凹陷底部附近形成了直径为5 ~ 15 nm的针孔。从针孔生长和晶界生长等晶体学特性方面讨论了Ta/sub 2/O/sub 5/薄膜的电学特性。
Effects of high temperature annealing over the range 400/sup 0/-1000/sup 0/C on the leakage current of tantalum pentoxide (Ta/sub 2/O/sub 5/) films deposited by reactive sputtering are investigated. Leakage current of polycrystalline Ta/sub 2/O/sub 5/ film (annealed above 700/sup 0/C) is about 10/sup 7/-10/sup 8/ times larger than that of as-deposited amorphous film. However, i is found that leakage current in Ta/sub 2/O/sub 5/ film annealed at 600/sup 0/C increases drastically as well, even though the films have no yet recrystallized. TEM observation reveals that pinholes ranging from 5 nm to 15 nm in diameter are formed near the bottom of the depressions in Ta/sub 2/O/sub 5/ film annealed even at 600/sup 0/C. Electrical properties of the Ta/sub 2/O/sub 5/ films are discussed in terms of crystallographic properties such as pinhole growth and grain boundaries.