Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials
Semiconductor Metal-Organic Frameworks: Future Low-Bandgap Materials
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DOI：
10.1002/adma.201605071
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发表时间：
2017-02-10
影响因子：
29.4
通讯作者：
Lu, Kuang-Lieh
中科院分区：
文献类型：
--
作者：
Usman, Muhammad;Mendiratta, Shruti;Lu, Kuang-Lieh
金属有机框架（MOF）具有低密度、高孔隙率以及功能和结构性能易于调节的特点，是用作半导体材料的潜在候选材料。半导体行业的快速发展和集成电路特征尺寸不断向纳米（nm）级微型化，需要新型半导体材料来代替硅、锗和砷化镓等传统材料。具有无机和有机成分优势的MOF有望成为微电子行业的下一代半导体材料，具有极其稳定、廉价和机械柔性的潜力。本文提供了有关 MOF 的半导体特性、带隙研究及其在微电子器件中的潜力的最新研究观点。
Metal-organic frameworks (MOFs) with low density, high porosity, and easy tunability of functionality and structural properties, represent potential candidates for use as semiconductor materials. The rapid development of the semiconductor industry and the continuous miniaturization of feature sizes of integrated circuits toward the nanometer (nm) scale require novel semiconductor materials instead of traditional materials like silicon, germanium, and gallium arsenide etc. MOFs with advantageous properties of both the inorganic and the organic components promise to serve as the next generation of semiconductor materials for the microelectronics industry with the potential to be extremely stable, cheap, and mechanically flexible. Here, a perspective of recent research is provided, regarding the semiconducting properties of MOFs, bandgap studies, and their potential in microelectronic devices.