3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser.
3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser.
复制标题
通过晶圆熔融半导体盘激光器倍频发射 3 W 650 nm 红光。
作者：
A. Rantamäki;A. Sirbu;A. Mereuta;E. Kapon;O. Okhotnikov
通过倍频，半导体盘激光器在 650 nm 的纯红色波长下实现了 3 W 功率。基于 InP 的有源介质与 GaAs/AlGaAs 分布式布拉格反射器融合，形成集成的单片增益镜。 1.3 µm 基波波长下的 6.6 W 输出功率代表了迄今为止此类激光器的最佳成就。
3 W at genuine red wavelength of 650 nm has been achieved from a semiconductor disk laser by frequency doubling. An InP based active medium was fused with a GaAs/AlGaAs distributed Bragg reflector resulting in an integrated monolithic gain mirror. 6.6 W of output power at the fundamental wavelength of 1.3 µm represents the best achievement reported to date for this type of lasers.