Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire
Experimental and theoretical characterization of the surface acoustic wave propagation properties of GaN epitaxial layers on c-plane sapphire
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DOI：
10.1557/jmr.2003.0158
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发表时间：
2003-05
影响因子：
2.7
通讯作者：
K. Choi;Hyeong Joon;Su-jin Chung;Jin Yong Kim;Tae-Kun Lee;Y. J. Kim
中科院分区：
文献类型：
--
作者：
K. Choi;Hyeong Joon;Su-jin Chung;Jin Yong Kim;Tae-Kun Lee;Y. J. Kim
对蓝宝石衬底上氮化镓（GaN）外延层的声表面波（SAW）传播特性进行了理论和实验研究。GaN薄膜生长在c-平面蓝宝石衬底上使用金属有机化学气相沉积系统。SAW传播特性的实验表征进行了叉指换能器结构的线性阵列，而SAW速度计算矩阵方法。实验上，我们发现GaN/蓝宝石结构中的伪SAW和高速伪SAW模式，这与计算的速度有很好的一致性。
Surface acoustic wave (SAW) propagation properties of gallium nitride (GaN) epitaxial layers on sapphire were theoretically and experimentally characterized. GaN thin films were grown on a c-plane sapphire substrate using a metalorganic chemical vapor deposition system. The experimental characterization of SAW propagation properties was performed with a linear array of interdigital transducer structures, while SAW velocities were calculated by matrix methods. Experimentally, we found pseudo-SAW and high-velocity pseudo-SAW modes in the GaN/sapphire structure, which had a good agreement with calculated velocities.