Enhanced electroluminescence from ZnO‐based heterojunction light‐emitting diodes by hydrogen plasma treatment
Enhanced electroluminescence from ZnO‐based heterojunction light‐emitting diodes by hydrogen plasma treatment
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DOI：
10.1002/pssr.201004497
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
S. G. Zhang;X. W. Zhang;J. X. Wang;J. You;Z. Yin;J. Dong;B. Cui;A. Wowchak;A. Dabiran
中科院分区：
文献类型：
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作者：
S. G. Zhang;X. W. Zhang;J. X. Wang;J. You;Z. Yin;J. Dong;B. Cui;A. Wowchak;A. Dabiran
系统地研究了氢等离子体处理对氧化锌基发光二极管电致发光的影响。经H等离子体处理后，在相同的注入电流下，n-ZnO/AlN/p-GaN器件的电致发光强度是未生长的器件的3倍，同时器件的阈值电压也显著降低。氢原子的引入增加了氧化锌层的电子浓度和迁移率，这被认为是提高氧化锌发光二极管性能的原因。(2011Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
The effects of H‐plasma treatment on the electroluminescence (EL) of ZnO‐based light‐emitting diodes have been investigated systematically. After H‐plasma treatment, the EL intensity of the n‐ZnO/AlN/p‐GaN device is observed to be three times stronger than its as‐grown counterpart under the same injection current, and the threshold voltage of the device is significantly reduced simultaneously. The increases in electron concentration and mobility of the ZnO layer resulting from the incorporation of hydrogen atoms into ZnO are considered to be responsible for the improved performance of the ZnO‐based light‐emitting diodes. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)