The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy
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DOI：
10.1063/1.3153966
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发表时间：
2009-07-01
影响因子：
3.2
通讯作者：
McConville, C. F.
中科院分区：
文献类型：
--
作者：
Bourlange, A.;Payne, D. J.;McConville, C. F.
在650~900℃的衬底温度范围内，研究了氧等离子体辅助分子束外延生长In_2O_3在Y稳定的ZrO_2(100)衬底上掺锡对In_2O_3生长的影响。在一定的锡通量下，随着衬底温度的升高，掺锡量单调减小。尽管在650℃下生长的“过掺杂”薄膜中的n型载流子浓度低于在750℃下生长的较低锡浓度的薄膜中的n型载流子浓度，但与锡掺杂相关的晶格参数的小幅增加导致了与衬底匹配的改善，并抑制了在Y稳定的ZrO2(100)衬底上高温生长未掺杂的In_2O_3时观察到的薄膜分裂成方岛的现象。在芯级光电子能谱中，从掺锡薄膜的红外反射光谱得到的等离子体激元能量接近于卫星能量，但对于名义上未掺杂的参考样品，有证据表明表面有载流子积累。这既影响了In 3D芯线的形状，也影响了与导带光电发射相关的费米能量附近的峰的强度。
The influence of Sn doping on the growth of In2O3 on Y-stabilized ZrO2(100) by oxygen plasma assisted molecular beam epitaxy has been investigated over a range of substrate temperatures between 650 and 900 degrees C. The extent of dopant incorporation under a constant Sn flux decreases monotonically with increasing substrate temperature, although the n-type carrier concentration in "overdoped" films grown at 650 degrees C is lower than in films with a lower Sn concentration grown at 750 degrees C. The small increase in lattice parameter associated with Sn doping leads to improved matching with the substrate and suppresses breakup of the films into square islands observed in high temperature growth of undoped In2O3 on Y-stabilized ZrO2(100). Plasmon energies derived from infrared reflection spectra of Sn-doped films are found to be close to satellite energies in core level photoemission spectroscopy, but for a nominally undoped reference sample there is evidence for carrier accumulation at the surface. This influences both the In 3d core line shape and the intensity of a peak close to the Fermi energy associated with photoemission from the conduction band.