Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces
Homoepitaxial growth and hot-wall low-pressure chemical vapor deposition reactor MOS structures of 4H-SiC on off-oriented n-type (0001) Si-faces
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DOI：
10.1109/icsict.2004.1435318
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发表时间：
2004-10
期刊：
影响因子：
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通讯作者：
Guosheng Sun;Jin Ning;Yongxing Zhang;Xin Gao;Lei Wang;Wanshun Zhao;Yiping Zeng;Jinmin Li
中科院分区：
文献类型：
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作者：
Guosheng Sun;Jin Ning;Yongxing Zhang;Xin Gao;Lei Wang;Wanshun Zhao;Yiping Zeng;Jinmin Li
在自制的热壁低压化学气相沉积（LPCVD）反应器中，SiH/sub 4/和C/sub 2/H/sub 4/，温度为1500℃，压力为20 torr，在无取向n型si面（0001）衬底上进行了4H-SiC的同外延生长。利用原子力显微镜（AFM）和二次离子质谱（SIMS）研究了4H-SiC薄膜的表面形貌和NH/sub - 3/原位掺杂。在1150℃的干燥O/sub /和H/sub /气氛中对4H-SiC同外延层进行热氧化，并用x射线光电子能谱（XPS）对氧化产物进行了表征。得到了4H-SiC MOS结构，并给出了其C-V特性。
Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low-pressure chemical vapor deposition (LPCVD) reactor with SiH/sub 4/ and C/sub 2/H/sub 4/ at temperature of 1500 C and pressure of 20 torr. The surface morphology and intentional in-situ NH/sub 3/ doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O/sub 2/ and H/sub 2/ atmosphere at a temperature of 1150 C. The oxide was investigated by employing X-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics are presented.