Manganese oxide thin film preparation by potentiostatic electrolyses and electrochromism
Manganese oxide thin film preparation by potentiostatic electrolyses and electrochromism
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DOI：
10.1149/1.1393515
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发表时间：
2000-06-01
影响因子：
3.9
通讯作者：
Ishikawa, M
中科院分区：
文献类型：
--
作者：
Chigane, M;Ishikawa, M
采用恒电位阳极电解法，在298K下，在透明导电氧化锡玻璃衬底上沉积了氧化锰(MnOx)薄膜，研究了不同沉积电压对薄膜微结构和电致变色性能的影响。X-射线衍射仪对薄膜的表征表明，薄膜存在两个不同的电势区(低于和高于0.3V vs.Ag/AgCl)，在较低和较高的区域沉积的薄膜的晶体结构为γ-Mn2O和/或Mn3O4和Mn7O13。5H(2)O。X射线光电子能谱(XPS)分析表明，在低电位区和高电位区制备的薄膜中，锰的价态分别是二价-三价和三价-四价的混合价。XPS分析还表明，薄膜的末端化学键是氢氧化物(Mn-O-H)和氧化物(Mn-O-Mn)的混合物。通过Mn-O-H和Mn-O-Mn中这两个氧基团之间的转换，并伴随着Mn的价态变化，可以解释EC过程中发生棕色和淡黄色颜色变化的机理。并对薄膜在开关性能方面的EC耐久性进行了评估。(C)2000年电化学会。S0013-4651(99)08-027-1。版权所有。
Manganese oxide (MnOx) thin films were deposited on transparent conducting tin oxide glass substrates by potentiostatic anodic electrolysis of alkaline solution of a manganese ammine complex at 298 K. The effects of varying deposition potentials on the microstructure and the electrochromic (EC) properties of the films were investigated. Characterization of films by X-ray diffraction revealed that two distinct potential regions (lower and higher than 0.3 V vs. Ag/AgCl) were available for the film deposition; the crystal structure of the film deposited at lower and higher regions were gamma-Mn2O3 and/or Mn3O4 and Mn7O13. 5H(2)O respectively. X-ray photoelectron spectroscopy (XPS) analyses of the films featuring exchange splitting effect on Mn 3s spectra indicated that the valence of manganese in the films prepared at lower and higher potential regions are mixtures of divalence-trivalence and of trivalence-tetravalence, respectively. The XPS analysis also revealed that terminal chemical bonding species of the films are a mixture of hydroxide (Mn-O-H) and oxide (Mn-O-Mn). The mechanism of the EC process, by which the color change between brown and light yellow occurs, could be explained in terms of the transformation between these two oxygen groups in Mn-O-H and Mn-O-Mn, accompanied by the change in valence of Mn. The EC durability of the films in switching performance was also assessed. (C) 2000 The Electrochemical Society. S0013-4651 (99)08-027-1. All rights reserved.