Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
复制标题
硅掺杂对AlxGa1−xN薄膜空位和光学性能的影响
DOI：
10.1063/1.2721132
复制
发表时间：
2007
影响因子：
4
通讯作者：
S. Denbaars
中科院分区：
文献类型：
--
作者：
J. Slotte;F. Tuomisto;K. Saarinen;C. Moe;S. Keller;S. Denbaars
作者利用正电子湮没谱和光致发光测量研究了硅掺杂对AlGaN：Si结构中空位形成的影响。结果表明，多普勒展宽测量和510 nm光致发光跃迁强度之间的相关性。当气相中的[Si] scin [Al+Ga]分数高于3×10 - 4时，W参数的降低表明正电子在存在较少Ga 3d电子的环境中湮灭，即，它们被困在III族空位中。在这些硅浓度下观察到的空位与在510 nm处的光致发光转变的开始一致。
The authors have used positron annihilation spectroscopy and photoluminescence measurements to study the influence of silicon doping on vacancy formation in AlGaN:Si structures. The results show a correlation between the Doppler broadening measurements and the intensity from 510nm photoluminescence transition. The reduction in the W parameter when the [Si]∕[Al+Ga] fraction in the gas phase is above 3×10−4 indicates that the positrons annihilate in an environment where less Ga 3d electrons are present, i.e., they are trapped in group-III vacancies. The observation of vacancies at these silicon concentrations coincides with the onset of the photoluminescence transition at 510nm.