Electronic standing waves on the surface of the topological insulator Bi2Te3
Electronic standing waves on the surface of the topological insulator Bi2Te3
复制标题
DOI：
10.1103/physrevb.86.085456
复制
发表时间：
2012-08-29
影响因子：
3.7
通讯作者：
Cserti, J.
中科院分区：
文献类型：
--
作者：
Rakyta, P.;Palyi, A.;Cserti, J.
金属表面上的线缺陷在电子局域态密度（LDOS）中引起驻波。在远离线缺陷处，LDOS振荡的波数通常等于Fermi轮廓嵌套段之间的距离，并且LDOS振荡的包络随着远离线缺陷而呈现幂律衰减。在这里，我们从理论上分析的LDOS振荡接近线缺陷的拓扑绝缘体Bi2Te3的表面上，并确定一个重要的预渐近贡献与波数和衰减特性显着不同的渐近贡献。计算的能量依赖性的波数的preasymptomatic LDOS振荡是在定量协议与最近的扫描隧道显微镜实验的结果[物理。104，016401（2010）]。
A line defect on a metallic surface induces standing waves in the electronic local density of states (LDOS). Asymptotically far from the defect, thewave number of the LDOS oscillations at the Fermi energy is usually equal to the distance between nesting segments of the Fermi contour, and the envelope of the LDOS oscillations shows a power-law decay as moving away from the line defect. Here, we theoretically analyze the LDOS oscillations close to a line defect on the surface of the topological insulator Bi2Te3, and identify an important preasymptotic contribution with wave-number and decay characteristics markedly different from the asymptotic contributions. The calculated energy dependence of the wave number of the preasymptotic LDOS oscillations is in quantitative agreement with the result of a recent scanning tunneling microscopy experiment [Phys. Rev. Lett. 104, 016401 (2010)].