Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC mosfets and Diodes
Accurate Transient Calorimetric Measurement of Soft-Switching Losses of 10-kV SiC mosfets and Diodes
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DOI：
10.1109/tpel.2017.2729892
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发表时间：
2018-06
影响因子：
6.7
通讯作者：
D. Rothmund;D. Bortis;J. Kolar
中科院分区：
文献类型：
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作者：
D. Rothmund;D. Bortis;J. Kolar
现代高压SiCMOSFET的软开关损耗(SSL)的表征是一项困难但又必要的任务，以便为中压连接的固态变压器等换流系统的准确建模提供良好的基础，其中采用软开关技术来提高换流效率。通常，开关损耗(SL)通常用众所周知的双脉冲方法来测量。然而，在SSL量测的情况下，这种方法对电流和电压瞬变测量的有限精度非常敏感，因此不适用于快速开关高压MOSFET的表征。本文以10千伏碳化硅MOSFET组件为例，提出了一种准确、可靠的SSL量热法。给出了不同直流侧电压和开关电流下的SSL值测量曲线。此外，还对SSL的起源进行了更深入的分析。利用所提出的测量方法，可以从实验上证明，对MOSFET模块的输出电容，特别是对反平行结势垒肖特基二极管的充放电，是SSL值的最大份额。
The characterization of soft-switching losses (SSL) of modern high-voltage SiC mosfets is a difficult but necessary task in order to provide a sound basis for the accurate modeling of converter systems, such as medium-voltage-connected solid-state transformers, where soft-switching techniques are employed to achieve an improved converter efficiency. Switching losses (SL), in general, are typically measured with the well-known double pulse method. In the case of SSL measurements, however, this method is very sensitive to the limited accuracy of the measurement of the current and voltage transients, and thus is unsuitable for the characterization of fast-switching high-voltage mosfets. This paper presents an accurate and reliable calorimetric method for the determination of SSL using the example of 10-kV SiC mosfet modules. Measured SSL curves are presented for different dc-link voltages and switched currents. Furthermore, a deeper analysis concerning the origin of SSL is performed. With the proposed measurement method, it can be experimentally proven that the largest share of the SSL arises from charging and discharging the output capacitance of the mosfet module and especially of the antiparallel junction barrier Schottky diode.