Sub-atomic-layer epitaxy of Si using Si2H6
Sub-atomic-layer epitaxy of Si using Si2H6
复制标题
使用 Si2H6 进行 Si 亚原子层外延
DOI：
10.1016/0169-4332(94)90237-2
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发表时间：
1994
影响因子：
6.7
通讯作者：
H. Ikeda
中科院分区：
文献类型：
--
作者：
Y. Suda;M. Ishida;Mitsutomi Yamashita;H. Ikeda
我们最近提出了一种亚原子层外延技术（销售），用它在Si（001）上从Si_2H_6通过亚单层到亚单层生长Si。与新纳入的表面热激发过程中，生长表面原子平坦化的每个生长周期，而不依赖于Si2H6的饱和覆盖。为了优化销售生长条件，使用电荷耦合器件相机观察了Si 2 H6暴露的Si（001）表面退火过程中反射高能电子衍射（RHEED）图案随时间的动态变化，研究了表面平坦化反应过程。退火后，初始表面的斑点状2 × 1图案变为条纹状2 × 1图案，然后再次变为斑点状2 × 1图案。在RHEED模式是条纹状的时期，阶地被认为是通过吸附原子迁移伴随或跟随氢解吸而出现和生长的。在这些RHEED研究的基础上，薄膜的厚度分布的轮廓，由销售方法使用Ar+离子激光作为表面激发源，已被研究。从RHEED和销售生长的研究结果中，得到了表面激发条件与销售方法中表面平坦化反应过程之间的关系。
We have recently proposed a sub-atomic-layer epitaxy technique (SALE) with which Si is grown by sub-monolayer-by-sub-monolayer from Si2H6on Si(001). With a newly incorporated surface thermal excitation process, the growth surface is atomically flattened every growth cycle without depending on the saturation coverage of Si2H6. To optimize SALE growth conditions, the surface flattening reaction process has been investigated by observing time-dependent dynamic changes in reflection high energy electron diffraction (RHEED) patterns during annealing Si2H6-exposed Si(001) surfaces using a charge-coupled-device camera. Upon annealing, a spotty 2 × 1 pattern of the initial surface changes to a streaky 2 × 1 pattern and then changes to a spotty 2 × 1 pattern again. In the period when the RHEED pattern is streaky, terraces are considered to emerge and grow by adatom migration accompanied by or following hydrogen desorption. On the basis of these RHEED studies, the thichness distribution profiles of films, grown by the SALE method using an Ar+ion laser as a surface excitation source, have been investigated. From the results of the RHEED and SALE growth studies, the relation between the surface excitation conditions and the surface flattening reaction process in the SALE method is obtained.