Low-Temperature Deposition of Zinc Oxide Film by Plasma-Assisted Mist Chemical Vapor Deposition
Low-Temperature Deposition of Zinc Oxide Film by Plasma-Assisted Mist Chemical Vapor Deposition
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等离子体辅助雾化化学气相沉积法低温沉积氧化锌薄膜
DOI：
10.1143/jjap.51.08hf05
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
Yusuke Okumura and Yuichi Setsuhara
中科院分区：
文献类型：
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作者：
Kosuke Takenaka;Yusuke Okumura and Yuichi Setsuhara
采用感应耦合等离子体源，采用等离子体辅助雾化化学气相沉积(CVD)方法沉积氧化锌薄膜，并以氧气混合比为参数，研究了等离子体曝光对薄膜性能的影响。随着氧气比Ar+O2(10%)的增加，X射线衍射谱显示出明显的氧化锌(0002)峰，表明在200℃以下的较低衬底温度下生长出高度c轴取向的氧化锌薄膜，沉积速率高达100 nm/min。采用等离子体辅助雾化化学气相沉积技术，获得了可见光透过率为75%、禁带宽度为3.32 eV的氧化锌薄膜。
Zinc oxide (ZnO) film deposition using a plasma-assisted mist chemical vapor deposition (CVD) with an inductively-coupled plasma source has been performed and the effects of the plasma exposure on film properties have been investigated with oxygen mixture ratio as a parameter. With increasing oxygen mixture ratio to Ar+ O 2 (10%), the X-ray diffraction (XRD) results showed evident peaks of ZnO (0002), indicating that highly c-axis-oriented films were grown at low substrate temperatures below 200 C. The deposition rate of ZnO films was as high as 100 nm/min. ZnO films with an optical transmittance of 75% for the visible region and a band gap energy of 3.32 eV have been obtained by using plasma-assisted mist CVD.