The response of silicon detectors to low-energy ion implantation
The response of silicon detectors to low-energy ion implantation
复制标题
硅探测器对低能离子注入的响应
DOI：
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
D. Jamieson
中科院分区：
文献类型：
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作者：
T. Hopf;C. Yang;S. Andresen;D. Jamieson
在90 K下，研究了低能（亚20 keV）离子在单晶硅中引起的电学瞬态，并对样品中的电离测量和损伤积累进行了研究。电离研究揭示了实验结果和预测之间的差异，从广泛使用的SRIM（停止和范围的离子在物质中）代码，一个随着能量的降低而增加：一个结果，这是以前从连续离子束的研究建议。对样品的损伤累积研究还表明，目前硅中损伤累积的模型在如此低的能量下是不够的，实验表明，单个离子在已知由这种撞击形成的小的非晶核之外产生了更大的电荷收集效率降低的区域。
Studies of electrical transients in single-crystal silicon induced by discrete low-energy (sub-20 keV) ions have been carried out at 90 K, with ionization measurements and damage accumulation in the sample being investigated. Ionization studies reveal a discrepancy between experimental results and predictions from the widely used SRIM (stopping and range of ions in matter) code, one which increases with decreasing energy: a result which has previously been suggested from studies with continuous ion beams. Damage accumulation studies of the sample also demonstrate that current models of damage build-up in silicon are inadequate at such low energies, with experiments indicating that individual ions create a much larger region of decreased charge collection efficiency outside of the small amorphous cores known to be formed by such impacts.