Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs
Temporal and Thermal Stability of Al2O3-Passivated Phosphorene MOSFETs
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DOI：
10.1109/led.2014.2362841
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发表时间：
2014-12-01
影响因子：
4.9
通讯作者：
Ye, Peide D.
中科院分区：
文献类型：
--
作者：
Luo, Xi;Rahbarihagh, Yaghoob;Ye, Peide D.
这封信评估的时间和热稳定性的国家的最先进的少层磷烯MOSFET的氧化铝表面钝化和Ti/Au顶栅。所制备的磷烯MOSFET在大气中至少稳定100 h。在200摄氏度的干燥氮气中退火1小时后，其漏极电流增加了一个数量级，接近100 mA/mm，这可能是由于源极和漏极接触处Al 2 O3和/或肖特基势垒中的捕获电荷减少。此后，漏极电流在-50 ° C和150 ° C之间稳定达至少2000小时。这些有希望的结果表明，磷烯的环境保护不应该是一个主要的问题，磷烯的钝化应集中在其对电子控制和传输的影响，在传统的硅MOSFET。截止频率接近千兆赫范围，本发明的磷烯MOSFET虽然远未优化，但可以满足大多数柔性电子器件的速度和稳定性要求，磷烯由于其波纹晶格结构而具有固有的优势。
This letter evaluates temporal and thermal stability of a state-of-the-art few-layer phosphorene MOSFET with Al2O3 surface passivation and Ti/Au top gate. As fabricated, the phosphorene MOSFET was stable in atmosphere for at least 100 h. With annealing at 200 degrees C in dry nitrogen for 1 h, its drain current increased by an order of magnitude to similar to 100 mA/mm, which could be attributed to the reduction of trapped charge in Al2O3 and/or Schottky barrier at the source and drain contacts. Thereafter, the drain current was stable between -50 degrees C and 150 degrees C up to at least 2000 h. These promising results suggest that environmental protection of phosphorene should not be a major concern, and passivation of phosphorene should focus on its effect on electronic control and transport as in conventional silicon MOSFETs. With cutoff frequencies approaching the gigahertz range, the present phosphorene MOSFET, although far from being optimized, can meet the speed and stability requirements of most flexible electronics for which phosphorene is intrinsically advantageous due to its corrugated lattice structure.