The Mextram Bipolar Transistor Model
The Mextram Bipolar Transistor Model
复制标题
DOI：
--
复制
发表时间：
2008
影响因子：
8.3
通讯作者：
R. V. D. Toorn;W. Kloosterman
中科院分区：
文献类型：
--
作者：
R. V. D. Toorn;W. Kloosterman
本文介绍了垂直双极型晶体管的CMC世界标准模型MExtram的定义。本文件的目的是给出模型的完整定义，包括参数集、等效电路和电流、电荷和噪声源的所有方程。除了定义之外，还介绍了物理背景。我们还给出了一个非常基本的参数提取过程。背景和参数提取都在专用文档中单独记录。描述了从MExtra M 503到MExtra M 504的转换，以实现将503参数集转换为504参数集。最后，我们给出了一些可以作为实现检验的数值例子。代尔夫特工业大学第三期2009年6月16日504.8版MExtram定义文件序言2004年10月MExarm双极型晶体管模型已于1994年1月公之于众。在当时的第503级，在Koninklijke飞利浦电子公司内部使用了MExarm的版本1。1995年6月，503.2版本发布，其中包含了一些改进。马德勒姆级别504包含对马德勒姆模型的完整回顾。初步版本已于2000年6月完成。本报告记录了504.5版。2004年10月，J.P.2005年3月2004年秋季，MExarm被紧凑型模型委员会(CMC)推选为世界标准晶体管模型，CMC是一个由20多家主要半导体制造商的代表组成的联盟。本报告记录了504.6版。2005年3月，RvdT。2008年春，紧凑模型开发人员和模型实现专家社区引入了灵活拓扑的概念。在2008年春季发布的MEXARM中，这被用来扩展MEXARM的拓扑结构，并以向后兼容的方式添加集电极电阻的分布。本报告记录了504.7版。2008年春，RvdT。2008年第四季度，2009年第一季度本文档介绍了504.8版，该版本增加了发射极基极结中齐纳隧道电流的模型。2008年春，RvdT。模型和文档的历史2000年6月：发布MExtram级别504(初步版本)与MExtram级别503相比模型的完整审查2001年4月：发布MExtram 504，版本0(504.0)小修复：-参数rth和cth添加到多标度-公式中的α表达式。(4.217)修复了w.r.t.2000年6月版本：-增加重叠电容CBEO和CBCO-改变扩散电压的温度标度-改变中性基复合电流(4.176)-增加具有自加热功能的数值例子。代尔夫特理工大学MExarm定义文件2009年6月16日(504.1)2001年9月：发布MExtrm 504，版本1(504.1)Rth的下界现在是0C/W FEX(4.164)和QB1B2(4.171)，以增强稳健性2002年3月：发布MExtrm 504，版本2(504.2)小VC1C2处XI/WEPI的数值稳定性改进，改进了P0，方程的数值稳定性。(2002.12)2002.12：文档中的微小更改，不在型号中2003年10月：MExtrm 504版本3(504.3)MULT已移至参数列表中Tref的下限限制值更改为−273◦C将IC、IB和βDC添加到工作点信息2004年4月：MExtrm 504版本4(504.4)集电极外延层的噪声已删除[原始公式(4.181)]。2004年10月：发布MExtrm 504，版本5(504.5)增加热阻对温度的依赖增加雪崩电流引起的噪声增加2005年3月：发布MExarm 504，版本6(504.6)增加了用于微调温度的参数DAI。副警长。等式；等式(4.37)在公式(4.66)中添加“gem=0”2008年3月推出的Kavl的上限制值1.0：发布MExtram 504，Version 7(504.7)增加了埋层RCblx和RCbli的电阻，以及它们的温度标度参数ACbl。电阻RE、RbC、Rbv、Rcc、Rcv、SCRCv的下限限值增加到1MΩ错误固定高温极限BnT。2009年6月：发布MExtram 504，版本8(504.8)，发射极-基极结中的齐纳隧道电流：-节：2.1.4，3，4.8.5，4.16-参数：IzEB，NZEB-材料常数，实现为参数：VgZEB，AVgEB，TVgEB-方程：(4.50b)至(4.50e)，(4.115a)，(4.183)，(4.191)-OP-INFO：Gπ，x，IztEB Delft of Technology v6月16日，2009年梅特尔姆504.8版梅德尔姆定义文件vi代尔夫特理工大学梅特尔姆定义文件
This document presents the definition of the CMC world stardard model Mextram, for vertical bipolar transistors. The goal of this document is to present the full definition of the model, including the parameter set, the equivalent circuit and all the equations for currents, charges and noise sources. Apart from the definition also an introduction into the physical background is given. We have given also a very basic parameter extraction procedure. Both the background and the parameter extraction are documented separately in dedicated documents. The transition from Mextram 503 to Mextram 504 is described, to enable the translation of a 503 parameter-set to a 504 parameterset. At last we have given some numerical examples that can act as a test of implementation. Delft University of Technology iii June 16, 2009 Mextram version 504.8 Mextram definition document Preface October 2004 The Mextram bipolar transistor model has been put in the public domain in Januari 1994. At that time level 503, version 1 of Mextram was used within Koninklijke Philips Electronics N.V. In June 1995 version 503.2 was released which contained some improvements. Mextram level 504 contains a complete review of the Mextram model. The preliminary version has been completed in June 2000. This report documents version 504.5. October 2004, J.P. March 2005 In the fall of 2004, Mextram was elected as a world standard transistor model by the Compact Model Council (CMC), a consortium of representatives from over 20 major semiconductor manufacturers. This report documents version 504.6. March 2005, RvdT. Spring 2008 In 2007, the notion of flexible topology was introduced by the community of compact model developers and model implementation specialists. In the spring 2008 release of Mextram, this was used to extend the topology of Mextram and add the distribution of the collector resistance in a backwards compatible manner. This report documents version 504.7. Spring 2008, RvdT. Q4 2008, Q1 2009 This document presents version 504.8, which adds a model for Zener tunneling currents in the Emitter base junction. Spring 2008, RvdT. History of model and documentation June 2000 : Release of Mextram level 504 (preliminary version) Complete review of the model compared to Mextram level 503 April 2001 : Release of Mextram 504, version 0 (504.0) Small fixes: – Parameters Rth and Cth added to MULT-scaling – Expression for α in Eq. (4.217) fixed Changes w.r.t. June 2000 version: – Addition of overlap capacitances CBEO and CBCO – Change in temperature scaling of diffusion voltages – Change in neutral base recombination current (4.176) – Addition of numerical examples with self-heating iv Delft University of Technology Mextram definition document June 16, 2009 September 2001 : Release of Mextram 504, version 1 (504.1) Lower bound on Rth is now 0C/W Small changes in Fex (4.164) and QB1B2 (4.171) to enhance robustness March 2002 : Release of Mextram 504, version 2 (504.2) Numerical stability improvement of xi/Wepi at small VC1C2 , p. 47 Numerical stability improvement of p0, Eq. (4.199) December 2002 : Minor changes in documentation, not in model October 2003 : Release of Mextram 504, version 3 (504.3) MULT has been moved in list of parameters Lower clipping value of Tref changed to −273◦C Added IC , IB and βdc to operating point information April 2004 : Release of Mextram 504, version 4 (504.4) Noise of collector epilayer has been removed [originally Eq. (4.181)]. October 2004 : Release of Mextram 504, version 5 (504.5) Addition of temperature dependence of thermal resistance Addition of noise due to avalanche current March 2005 : Release of Mextram 504, version 6 (504.6) Added parameter dAIs for fine tuning of temp. dep. of IsT; eqn. (4.37) “GEM = 0” added to equation (4.66) Upper clipping value 1.0 of Kavl introduced March 2008 : Release of Mextram 504, version 7 (504.7) Added resistances of buried layer RCblxand RCbli, and their temperature scaling parameter ACbl. Lower clipping value of resistances RE, RBC, RBV, RCc, RCv, SCRCv increased to 1mΩ Bug fix high temperature limit BnT . June 2009 : Release of Mextram 504, version 8 (504.8), Zener tunneling current in emitter-base junction: – Sections: 2.1.4, 3, 4.8.5, 4.16 – Parameters: IzEB, NzEB – Material constants, implemented as parameters: VgZEB, AVgEB, TVgEB – Equations: (4.50b) to (4.50e), (4.115a), (4.183), (4.191) – OP-info: gπ,x, IztEB Delft University of Technology v June 16, 2009 Mextram version 504.8 Mextram definition document vi Delft University of Technology Mextram definition document