Simple approximation for Fermi energy in nonparabolic semiconductors
Simple approximation for Fermi energy in nonparabolic semiconductors
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DOI：
10.1063/1.104485
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发表时间：
1991-03
影响因子：
4
通讯作者：
V. Altschul;E. Finkman
中科院分区：
文献类型：
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作者：
V. Altschul;E. Finkman
我们提出了一个简单的近似费米能量的载流子浓度在抛物和非抛物半导体。该解决方案是在一个多项式校正的形式，以玻尔兹曼近似半导体统计。该方法类似于Joyce-Dixon级数近似，但使用多项式回归来获得级数系数，从而扩展了模型的有效性范围。对于非抛物型半导体，多项式系数使用Kane的k■p模型计算态密度。新的近似证明了一个可接受的精度为带隙大于2 kT和费米能量高达10 kT。该表达式简单，在先进半导体器件的建模中应该是有用的。
We propose a simple approximation relating the Fermi energy to carrier concentration in both parabolic and nonparabolic semiconductors. The solution is in the form of a polynomial correction to Boltzmann’s approximation of semiconductor statistics. The method is similar to the Joyce–Dixon series approximation, but uses polynomial regression to obtain series coefficients which extends the range of the model’s validity. For nonparabolic semiconductors, polynomial coefficients are calculated using Kane’s k■p model for the density of states. The new approximation demonstrates an acceptable accuracy for band gaps larger than 2 kT and for the Fermi energy up to 10 kT. The expression is simple and should be useful in the modeling of advanced semiconductor devices.