Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3
Universality of electron mobility in LaAlO3/SrTiO3 and bulk SrTiO3
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LaAlO3/SrTiO3 和块体 SrTiO3 中电子迁移率的普遍性
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
N. Pryds
中科院分区：
文献类型：
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作者：
F. Trier;K. Reich;D. Christensen;Y. Zhang;H. Tuller;Y. Chen;B. Shklovskii;N. Pryds
Metallic LaAlO3/SrTiO3 (LAO/STO) interfaces attract enormous attention, but the relationship between the electron mobility and the sheet electron density, ns, is poorly understood. Here, we derive a simple expression for the three-dimensional electron density near the interface, n3D, as a function of ns and find that the mobility for LAO/STO-based interfaces depends on n3D in the same way as it does for bulk doped STO. It is known that undoped bulk STO is strongly compensated with N≃5×1018 cm−3 background donors and acceptors. In intentionally doped bulk STO with a concentration of electrons n3D N, the mobility collapses because scattering happens on n3D intentionally introduced donors. For LAO/STO, the polar catastrophe which provides electrons is not supposed to provide an equal number of random donors and thus the...
