Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
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DOI：
10.1103/physrevb.82.241306
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发表时间：
2010-12-09
影响因子：
3.7
通讯作者：
Ando, Yoichi
中科院分区：
文献类型：
--
作者：
Ren, Zhi;Taskin, A. A.;Ando, Yoichi
拓扑绝缘体预测目前有趣的表面输运现象，但他们的实验研究一直受到阻碍的金属体导电，表面输运。我们发现，拓扑绝缘体Bi 2 Te 2 Se呈现出超过1 Ω cm的高电阻率和可变范围的跳跃行为，但仍呈现来自拓扑表面态的Shubnikov-de哈斯振荡。此外，我们已经能够澄清散装和表面运输渠道，建立在这种材料的运输的全面理解。我们的研究结果表明，Bi 2 Te 2Se是，据我们所知，最好的材料，以研究拓扑绝缘体中的表面量子输运。
Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by a metallic bulk conduction that overwhelms the surface transport. We show that the topological insulator Bi2Te2Se presents a high resistivity exceeding 1 Omega cm and a variable-range hopping behavior, and yet presents Shubnikov-de Haas oscillations coming from the topological surface state. Furthermore, we have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport in this material. Our results demonstrate that Bi2Te2Se is, to our knowledge, the best material to date for studying the surface quantum transport in a topological insulator.