Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
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DOI：
10.1007/s00339-018-2286-x
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发表时间：
2019-01-01
影响因子：
2.7
通讯作者：
Chandrappan, J.
中科院分区：
文献类型：
--
作者：
Albarkaty, K. S.;Kumi-Barimah, E.;Chandrappan, J.
研究了飞秒脉冲激光沉积法在硅衬底上制备掺Er3+的硫化镧镓薄膜的性能随工艺温度的变化规律。利用过渡电子显微镜成像、x射线衍射、拉曼光谱、荧光光谱和紫外-可见-近红外光谱对薄膜进行了表征。结果表明，随着衬底温度的升高，沉积层厚度增加，薄膜的结晶度发生变化。本文报道了Er3+的(I13/2I15/2)-I-4-I-4跃迁的室温光致发光和寿命。
The properties of Er3+-doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV-Vis-NIR spectroscopy. The results show that by increasing the substrate temperature, the deposited layer thickness increases and the crystallinity of the films changes. The room temperature photoluminescence and lifetimes of the (I13/2I15/2)-I-4-I-4 transition of Er3+ are reported in the paper.