Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays.
Polycrystalline Mercuric Iodide Films on CMOS Readout Arrays.
复制标题
CMOS 读出阵列上的多晶碘化汞薄膜。
DOI：
10.1109/tns.2009.2023478
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发表时间：
2009
影响因子：
1.8
通讯作者：
Gandhi,Thulasidharan
中科院分区：
文献类型：
--
作者：
Hartsough,NealE;Iwanczyk,JanS;Nygard,Einar;Malakhov,Nail;Barber,WilliamC;Gandhi,Thulasidharan
We have created high-resolution x-ray imaging devices using polycrystalline mercuric iodide (HgI2) films grown directly onto CMOS readout chips using a thermal vapor transport process. Images from prototype 400 times 400 pixel HgI2-coated CMOS readout chips are presented, where the pixel grid is 30 mum times 30 mum. The devices exhibited sensitivity of 6.2 muC/Rcm2with corresponding dark current of ~2.7 nA/cm2, and a 80 mum FWHM planar image response to a 50 mum slit aperture. X-ray CT images demonstrate a point spread function sufficient to obtain a 50 mum spatial resolution in reconstructed CT images at a substantially reduced dose compared to phosphor-coated readouts. The use of CMOS technology allows for small pixels (30 mum), fast readout speeds (8 fps for a 3200 times 3200 pixel array), and future design flexibility due to the use of well-developed fabrication processes.
