Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions.
Recombination processes and photoluminescence intensity in quantum wells under steady-state and transient conditions.
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稳态和瞬态条件下量子阱中的复合过程和光致发光强度。
DOI：
10.1103/physrevb.51.7029
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发表时间：
1995
期刊：
影响因子：
--
通讯作者：
Tsukada
中科院分区：
文献类型：
--
作者：
Brandt;Kanamoto;Gotoda;Isu;Tsukada
本文对量子阱中复合过程进行了理论和实验研究。我们的模型计算包括自由激子、自由载流子和缺陷介导的非辐射复合，描述了稳态条件下的光致发光强度与激发密度的关系，以及暂态条件下的光致发光强度与时间的关系。对于前一种情况，原则上不可能区分激子和自由载流子对光致发光强度的贡献。然而，可以准确地确定非辐射贡献和辐射贡献的相对权重。另一方面，对于瞬变情况，激子的贡献可以被识别，而辐射和非辐射贡献之间的区别-尽管可能--具有模棱两可的色彩。最后，我们将我们的模型应用于一组实验数据，这些数据是在300K下从单个${\mathrm{In}}_{0.1}$${\mathrm{Ga}}_{0.9}$As/${\mathrm{Al}}_{0.33}$${\mathrm{Ga}}_{0.67}$As量子阱中获得的，包括稳态和暂态两种情况。这一分析的结果证明了我们的模型的一致性及其在定量理解量子阱中的复合动力学方面的潜力。
We present a theoretical and experimental study of recombination processes in quantum wells. Our model calculations, which include free-excitonic, free-carrier, and defect-mediated nonradiative recombination, describe the dependence of the photoluminescence intensity on excitation density under steady-state conditions and on time under transient conditions. For the former conditions, it is not, in principle, possible to distinguish between excitonic and free-carrier contributions to the photoluminescence intensity. However, an accurate determination of the relative weight of nonradiative and radiative contributions can be made. For transient conditions, on the other hand, excitonic contributions may be identified, while the discrimination between radiative and nonradiative contributions is---though possible---possessed with ambiguities. We finally apply our model to a set of experimental data, taken at 300 K from a single ${\mathrm{In}}_{0.1}$${\mathrm{Ga}}_{0.9}$As/${\mathrm{Al}}_{0.33}$${\mathrm{Ga}}_{0.67}$As quantum well under both steady-state and transient conditions. The results of this analysis demonstrate the consistency of our model and its potential for the quantitative understanding of the recombination dynamics in quantum wells.