Experiments of highly emissive metal-oxide-semiconductor electron tunneling cathode
Experiments of highly emissive metal-oxide-semiconductor electron tunneling cathode
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高发射金属氧化物半导体电子隧道阴极实验
DOI：
10.1116/1.588878
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发表时间：
1996
影响因子：
1.4
通讯作者：
Y. Neo
中科院分区：
文献类型：
--
作者：
K. Yokoo;G. Koshita;S. Hanzawa;Y. Abe;Y. Neo
测量了硅栅金属氧化物半导体 (MOS) 电子隧道阴极中 SiO2 导带中热电子的有效平均自由程，结果约为 0.7 nm。根据这些观察，我们提出并制造了耗尽栅 MOS 电子隧道阴极。在低发射电流水平下，阴极实现了13.3%的最高转移率，这明显高于过去研究的隧道阴极。然而，由于空穴从栅极注入到耗尽区，该比率在高电流下急剧下降。
An effective mean‐free path of hot electrons in the conduction band of SiO2 in a Si‐gate metal–oxide–semiconductor (MOS) electron tunneling cathode was measured and found to be about 0.7 nm. Following these observations, we proposed and fabricated a depletion gate MOS electron tunneling cathode. The highest transfer ratio of 13.3% was achieved in the cathode at the low emission current level, which was considerably higher than that of tunneling cathodes studied in the past. However, the ratio decreased drastically at high current due to the hole injection into the depletion region from the gate.