Breakdown of the integer quantum Hall effect at high currents in GaAs/AlGaAs heterostructures
Breakdown of the integer quantum Hall effect at high currents in GaAs/AlGaAs heterostructures
复制标题
GaAs/AlGaAs 异质结构中高电流下整数量子霍尔效应的击穿
DOI：
10.1088/0268-1242/11/11s/016
复制
发表时间：
1996
影响因子：
1.9
通讯作者：
S. Kawaji
中科院分区：
文献类型：
--
作者：
S. Kawaji
在学习院大学对由不同电子浓度和迁移率的GaAs/AlGaAs异质结晶片制成的蝶形霍尔条样品进行了整数量子霍尔效应（QHE）击穿的测量，实验结果表明，QHE击穿的开始是由平均电流密度或平均霍尔电场引起的。结果支持的想法，边缘通道图片是不现实的描述QHE。临界击穿霍尔场（i = 2和4）和（i = 1和3）与其中B是每个量子化霍尔平台中心处的磁场成比例。在强磁场中的有效g因子在这个二维系统中的评估，从实验结果假设。
Experimental results of the breakdown of the integer quantum Hall effect (QHE) measured at Gakushuin University for butterfly-type Hall bar samples fabricated from GaAs/AlGaAs heterostructure wafers with various electron concentrations and mobilities show that the onset of the breakdown of the QHE is caused by average current density or average Hall electric field. The result supports the idea that the edge channel picture is not a realistic description of the QHE. The critical breakdown Hall fields (i = 2 and 4) and (i = 1 and 3) are proportional to where B is the magnetic field at the centre of each quantized Hall plateau. The effective g-factor in this 2D system in strong magnetic fields is evaluated as from the experimental result assuming .