Size effect of the resistivity of thin epitaxial gold films -: art. no. 165414
Size effect of the resistivity of thin epitaxial gold films -: art. no. 165414
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DOI：
10.1103/physrevb.70.165414
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发表时间：
2004-10-01
影响因子：
3.7
通讯作者：
Ziemann, P
中科院分区：
文献类型：
--
作者：
Kästle, G;Boyen, HG;Ziemann, P
研究了厚度在2 ~ 50 nm之间的（111）取向金薄膜的电阻率随温度的变化关系。这些Au薄膜的质量上级在云母上生长的外延Au薄膜，因此研究良好限定的薄膜是可能的。在经典的电阻率尺寸效应理论的框架内对实验进行了分析。事实证明，对于薄膜，与体值相比，特征德拜温度强烈降低。与Soffer的物理驱动方法相反，Fuchs-Sondheimer的原始模型以物理一致的方式描述了实验数据。
The temperature dependence of the electrical resistivity of thin, epitaxial, and flat (111)-oriented gold films with thickness between 2 and 50 nm is investigated. The quality of these Au films is superior to epitaxial Au films grown on mica, therefore the investigation of well-defined thin films was possible. The experiments are analyzed within the frame of classical size-effect theories of the resistivity. It turns out that for thin films, the characteristic Debye temperature is strongly decreased as compared to the bulk value. In contrast to the more physically motivated approach of Soffer, the original model of Fuchs-Sondheimer describes the experimental data in a physically consistent way.