Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)
Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)
复制标题
用于微波隧道二极管振荡器的非线性偏置电阻（对应）
DOI：
--
复制
发表时间：
1963
期刊：
影响因子：
--
通讯作者：
A. Dansky
中科院分区：
文献类型：
--
作者：
J. Wallmark;A. Dansky
通过在隧道二极管振荡器和放大器电路中使用非线性而不是线性稳定电阻器，电阻器中的直流功耗对于典型的锗隧道二极管可以降低3倍，对于典型的砷化镓隧道二极管可以降低6倍。同时，电阻器的交流负载也减少了。这种非线性稳定电阻器可以由反向或正向偏置的重掺杂pn结组成。
By using a nonlinear rather than a linear stabilizing resistor in tunnel-diode oscillator and amplifier circuits, the dc power dissipation in the resistor may be reduced by a factor of 3 for typical germanium tunnel diodes, and by a factor of 6 for typical gallium arsenide tunnel diodes. At the same time ac loading by the resistor is reduced. Such nonlinear stabilizing resistors may consist of reverse- or forward-biased heavily doped pn junctions.