Photoluminescence in InP hydrogenated by plasma exposure
Photoluminescence in InP hydrogenated by plasma exposure
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等离子体暴露氢化 InP 中的光致发光
DOI：
10.1049/el:19890401
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发表时间：
1989
影响因子：
1.1
通讯作者：
H. Hashimoto
中科院分区：
文献类型：
--
作者：
T. Sugino;Aniroot Boonyasirikool;J. Shirafuji;H. Hashimoto
用氢等离子体实现了InP表面的氢化。在95-100℃的有限温度范围内，与未曝光的InP相比，InP的光致发光(PL)强度显著提高了5.4倍。另一方面，在略高于100℃的温度下，由于磷从InP表面优先解离，导致发光强度降低，从而导致表面损伤。二次离子质谱仪(SIMS)证实，浓度为1×1018cmInP3的氢扩散到体相−中，深度达30 0 nm。
Hydrogenation of an InP surface has been achieved by hydrogen plasma. Exposure in the limited temperature range 95–100°C gives rise to a remarkable enhancement of the photoluminescence (PL) intensity by a factor of 5.4 compared with that of unexposed InP. On the other hand, a reduction in the PL intensity occurs at temperatures a little higher than 100°C which leads to surface damage owing to preferential dissociation of phosphorus from the surface of InP. It is confirmed by secondary ion mass spectroscopy (SIMS) that hydrogen with concentration of 1 ×1018 cm−3 diffuses into the bulk InP down to a depth of 300 nm.