Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes
Nanoscale phase changes in crystalline Ge2Sb2Te5 films using scanning probe microscopes
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DOI：
10.1063/1.2163010
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发表时间：
2006-01
影响因子：
3.2
通讯作者：
H. Satoh;K. Sugawara;Katsuhisa Tanaka
中科院分区：
文献类型：
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作者：
H. Satoh;K. Sugawara;Katsuhisa Tanaka
利用原子力显微镜（AFM）和扫描隧道显微镜（STM）通过电相变在Ge 2Sb 2 Te 5薄膜中制备了纳米级非晶标记。由AFM和STM的金属探针施加的持续时间为5-100 ns的电压脉冲可以分别产生高电阻区域和变形，最小尺寸为直径100 nm和100 nm。拉曼散射光谱表明，这些标记是无定形的。AFM标记可以通过施加更长的脉冲来擦除。从热力学和热力学两方面分析了痕迹的形成过程。
Nanoscale amorphous marks have been produced in crystalline Ge2Sb2Te5 films using an atomic-force microscope (AFM) and a scanning-tunneling microscope (STM) through electrical phase changes. Voltage pulses with duration of 5–100 ns applied by metal probes of the AFM and the STM can produce, respectively, high-resistance regions and deformations, the smallest sizes being ∼10 and ∼100 nm in diameter. Raman-scattering spectra demonstrate that these marks are amorphous. The AFM mark can be erased by applying longer pulses. Formation processes of the marks are considered from electrothermal and thermodynamic aspects.