Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors
Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors
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碳纳米管晶体管双极输运和量子效应的蒙特卡罗研究
DOI：
10.1109/sispad.2009.5290195
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
P. Dollfus
中科院分区：
文献类型：
--
作者：
Huu;S. Retailleau;D. Querlioz;A. Bournel;P. Dollfus
在本文中，我们研究的CNFET的器件操作使用Monte Carlo模拟。两种类型的接触（欧姆和肖特基）被认为是双极传输肖特基势垒的影响进行了分析。我们还讨论了量子效应的实际影响的基础上维格纳模拟结果。不同结构的输出和高频特性的介绍和讨论。
In this paper, we investigate the device operation of CNFETs using Monte Carlo simulation. Two types of contacts (ohmic and Schottky) are considered and the effect of ambipolar transport with Schottky barriers is analysed. We also discuss the actual influence of quantum effects on the basis of Wigner simulation results. The output and high-frequency characteristics of different structures are presented and discussed.