Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
复制标题
超薄栅极氧化物中氧化电压和瞬态电介质软击穿和硬击穿的场依赖性的定量分析
DOI：
10.1143/jjap.41.2426
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发表时间：
2002
影响因子：
1.5
通讯作者：
M. Hirose
中科院分区：
文献类型：
--
作者：
W. Mizubayashi;Y. Yoshida;S. Miyazaki;M. Hirose
研究了2.2-4.9 nm厚栅氧化层的软击穿（SBD）和硬击穿（HBD）机制。电荷软击穿（QSBD）与恒定电压应力下的软击穿时间（tSBD）处的应力诱导电流的增量变化相关，而电荷硬击穿（QBD）由于SBD电流的时间波动而与应力诱导电流的变化无关。指出SiO2/Si（100）界面1.5nm内SiO2中存在的应变Si-O-Si键可能是引起SBD的缺陷前体，用热化学电场模型解释了双栅氧化物中与时间相关的介质软击穿。结果表明，SBD和HBD是由共同的物理机制引起的。
Soft breakdown (SBD) and hard breakdown (HBD) mechanisms have been studied for 2.2-4.9-nm-thick gate oxides. The charge-to-soft breakdown (QSBD) is correlated to the incremental change in the stress-induced current at the time-to-soft breakdown (tSBD) under constant voltage stress, while the charge-to-hard breakdown (QBD) exhibits no correlation with change in the stress-induced current because of the temporal fluctuation of the SBD current. By noting that strained Si–O–Si bonds existing in SiO2 within 1.5 nm of the SiO2/Si(100) interface could be defect precursors which cause the SBD, time-dependent dielectric soft breakdown in ultrathin gate oxides is consistently explained by the thermochemical electric field model. It is shown that SBD and HBD are caused by a common physical mechanism.