GaN-Based RF power devices and amplifiers
GaN-Based RF power devices and amplifiers
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DOI：
10.1109/jproc.2007.911060
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发表时间：
2008-02-01
影响因子：
20.6
通讯作者：
Wu, Yi-Feng
中科院分区：
文献类型：
--
作者：
Mishra, Umesh K.;Shen, Likun;Wu, Yi-Feng
射频功率电子技术的迅速发展要求引入宽带隙材料，因为宽带隙材料具有高输出功率密度、高工作电压和高输入阻抗的潜力。GaN基射频功率器件在过去的十年中取得了长足的进步。本文综述了GaN HEMT技术的最新进展，包括材料生长、工艺技术、器件外延结构和MMIC设计，以实现最先进的微波和毫米波性能。还讨论了可靠性和制造挑战。
The rapid development of the RF power electronics requires the introduction of wide bandgap material due to its potential in high Output power density, high operation voltage and high input impedance. GaN-based RF power devices have made substantial progresses in the last decade. This paper attempts to review the latest developments of the GaN HEMT technologies, including material growth, processing technologies, device epitaxial structures and MMIC designs, to achieve the state-of-the-art microwave and millimeter-wave performance. The reliability and manufacturing challenges are also discussed.