Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 heterostructures
Electro and photon double-driven non-volatile and non-destructive readout memory in Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 heterostructures
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Pt/Bi0.9Eu0.1FeO3/Nb:SrTiO3 异质结构中的电子和光子双驱动非易失性和无损读出存储器
DOI：
10.1016/j.ceramint.2019.10.256
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发表时间：
2020
影响因子：
5.2
通讯作者：
Liu Jun-Ming
中科院分区：
文献类型：
--
作者：
Wei Maocai;Liu Meifeng;Yang Lun;Xie Bo;Li Xiang;Wang Xiuzhang;Cheng Xiangyang;Zhu Yongdan;Li Zijiong;Su Yuling;Li Meiya;Hu Zhongqiang;Liu Jun-Ming
铁电电阻开关作为下一代非易失性存储器的一个有前途的候选者，最近引起了相当大的关注。在这项工作中，我们报告了一个电和光子双驱动的双极电阻开关行为的Pt /Bi0.9Eu0.1FeO3（BEFO）/Nb掺杂的SrTiO 3（NSTO）异质结通过脉冲激光沉积制备。除了电阻存储器的基于偏振的控制之外，还观察到可切换的光伏效应，其可以用于非破坏性地检测偏振方向。值得注意的是，电场调制的界面势垒可以进一步受到光子产生的载流子的影响。这一现象归因于电场和光子激发对Pt /BEFO和BEFO /NSTO界面势垒的调制。这些结果表明，非易失性和非破坏性读出铁电存储器的可行性。
Ferroelectric resistive switching has recently attracted considerable attention as a promising candidate for next-generation non-volatile memory. In this work, we report an electro and photon double-driven bipolar resistive switching behavior in Pt /Bi0.9Eu0.1FeO3(BEFO) /Nb-doped SrTiO3(NSTO) heterostructures prepared via pulsed laser deposition. In addition to the polarization-based control of the resistive memory, a switchable photovoltaic effect is observed that can be used to detect the polarization direction non-destructively. Significantly, the electric field-modulated interfacial barrier can be further affected by photon-generated carriers. This phenomenon is attributed to the barrier modulation in the Pt /BEFO and BEFO /NSTO interfaces by electric field and photon excitation. These results indicate the feasibility of non-volatile and non-destructive readout from ferroelectric memory.