Optical absorption in In0.72Ga0.28As0.60P0.40:Ge
Optical absorption in In0.72Ga0.28As0.60P0.40:Ge
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In0.72Ga0.28As0.60P0.40:Ge 中的光吸收
DOI：
10.1063/1.345328
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发表时间：
1990
影响因子：
3.2
通讯作者：
B. Arora
中科院分区：
文献类型：
--
作者：
R. Rajalakshmi;B. Arora
在锗掺杂下，In0.72Ga0.28As0.60P0.40的吸收光谱中出现了明显的乌尔巴赫尾，这是由于在价带边缘由无序诱导的局域态过渡到导带。该疾病的不同组成部分已被考虑。考虑多声子发射，进行了模型计算。
A prominent Urbach tail is introduced in the absorption spectra of In0.72Ga0.28As0.60P0.40, by Ge doping, due to transitions from disorder‐induced localized states at the valence‐band edge to conduction band. Different components of the disorder have been considered. A model calculation, considering multiphonon emission, has been made.