Heat balance during plasma immersion ion implantation
Heat balance during plasma immersion ion implantation
复制标题
等离子体浸没离子注入过程中的热平衡
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
B. Rauschenbach
中科院分区：
文献类型：
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作者：
D. Manova;S. Mändl;B. Rauschenbach
测量了等离子体浸没离子注入(PIII)氮气时衬底温度随脉冲偏置电压和重复频率的变化。研究了温度在150~500℃、脉冲电压在-5~-30kV范围内平衡频率的变化。利用这些数据，得到了不同电压下的每脉冲相对剂量，并与PIII期间等离子体鞘膨胀的不同模型进行了比较。由于二次电子与等离子体的相互作用，必须假定比没有脉冲的静态等离子体测得的等离子体密度更高。氮离子注入硅的剂量测量结果也与实验结果吻合较好。对于高于1 kHz的高脉冲频率，观察到了偏差，清楚地表明在脉冲期间从等离子体中耗尽离子导致在高重复频率下平均等离子体密度降低。
The substrate temperature was measured during plasma immersion ion implantation (PIII) of nitrogen as a function of the pulse bias voltage and the repetition frequency. The variation of the equilibrium frequency for temperatures between 150 and 500 °C and pulse voltages between -5 and -30 kV was investigated. Using these data, the relative dose per pulse for different voltages was obtained and its voltage dependence compared with different models for the plasma sheath expansion during PIII. A higher plasma density than measured for a static plasma without pulses, due to the interaction of secondary electrons with the plasma, must be assumed. Good agreement with dose measurements of N implanted in Si was also observed. For high pulse frequencies above 1 kHz a deviation was observed, clearly showing that depletion of the ions from the plasma during the pulses leads to reduced average plasma density at high repetition rates.