Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline
Se Vacancy Effect on the Thermoelectric Performance of Pb-Doped In4Pb0.01Se3-x Polycrystalline
复制标题
Se空位对Pb掺杂In4Pb0.01Se3-x多晶热电性能的影响
DOI：
10.1007/s11664-016-5218-6
复制
发表时间：
2017
影响因子：
2.1
通讯作者：
Zhou XY
中科院分区：
文献类型：
--
作者：
Alsharafi Rashed;Zhan Heng;Shaheen Nusrat;Lu Xu;Sun Xiaonan;Zhou Xiaoyuan;Wang Guoyu;Sun XN;Zhou XY
硒化铟因其优异的电学和热学性能而被认为是一种高效的热电材料。本文报道了Se空位对用放电等离子烧结法制备的掺铅In4Pb0.01Se3−x(x=0，0.03，0.07，0.1)多晶热电性能的影响。用X射线粉末衍射仪、扫描电子显微镜和透射电子显微镜对所得产物进行了表征。由于掺铅化合物中Se空位的增加，随着载流子浓度的增加，随着晶格热导率的降低，其电阻率也随之降低。最终，In4Pb0.01Se3−x(x=0.07)在690K时具有较高的ZT值0.95。
Indium selenides have been considered as highly efficient thermoelectric materials due to their excellent electrical and thermal properties. Herein, we report the effect of Se vacancy on the thermoelectric performance of Pb-doped In4Pb0.01Se3−xpolycrystalline (x= 0, 0.03, 0.07, and 0.1) synthesized by solid state reaction followed by spark plasma sintering. The obtained products are characterized by x-ray powder diffraction, scanning electron microscopy, and transmission electron microscopy. Owing to the increase of Se vacancy in Pb-doped compounds, the electrical resistivity is reduced by increasing carrier concentration along with the reduction of the lattice thermal conductivity. Ultimately, the In4Pb0.01Se3−x(x= 0.07) exhibits a high ZT value of 0.95 at 690 K.