Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method
Analysis of local segregation of impurities at a silicon melt-crystal interface during crystal growth in transverse magnetic field-applied Czochralski method
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DOI：
10.1016/j.jcrysgro.2009.02.041
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发表时间：
2009-04
影响因子：
1.8
通讯作者：
K. Kakimoto;Lijun Liu
中科院分区：
文献类型：
--
作者：
K. Kakimoto;Lijun Liu
