Magnetic and Electrical Properties of Spinel Copper Ferrite Thin Films
Magnetic and Electrical Properties of Spinel Copper Ferrite Thin Films
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DOI：
10.4283/jmag.2018.23.1.001
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发表时间：
2018-03
影响因子：
0.5
通讯作者：
K. Kim;Jongho Park;J. Park
中科院分区：
文献类型：
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作者：
K. Kim;Jongho Park;J. Park
在α-Al_2O_3（0001）衬底上制备的Cu_xFe_（3-x）O_4铁酸铜薄膜在Cu组分x = 1.0时具有尖晶石结构。取代的Cu离子表现出+2价的电荷，占据了尖晶石晶格的四面体和八面体位置。对CuxFe 3-xO 4薄膜的磁滞测量表明，随着x的增加，饱和磁化强度（Ms）逐渐丧失：当x = 1.0时，Ms降低到Fe 3 O 4的约50%。Cu_xFe_（3-x）O_4薄膜的电阻率（ρ）随x的增加而增加，当x = 1.0时，ρ比Fe_3 O_4的电阻率大30倍。CuxFe 3-xO 4的磁和电性质的演变可以解释在四面体和八面体铜密度之间的竞争亚铁磁矩和极化子导电。
Copper ferrite (CuxFe3-xO4) thin films synthesized on α-Al2O3(0001) substrates exhibited the spinel structure for Cu compositions up to x = 1.0. The substituent Cu ions exhibited charge valence of +2, occupying both the tetrahedral and the octahedral sites of the spinel lattice. Magnetic hysteresis measurements on the CuxFe3-xO4 films revealed gradual loss of saturation magnetization (Ms) with increasing x: Ms is reduced to ~50 % that of Fe3O4 for x = 1.0. The electrical resistivity (ρ) of the CuxFe3-xO4 films increased with x: ρ for x = 1.0 is larger by a factor of 30 than that of Fe3O4. The evolution of the magnetic and electrical properties of CuxFe3-xO4 can be explained in terms of the competition between the tetrahedral and octahedral Cu density for ferrimagnetic moment and polaronic conduction.