Scaling of anomalous hall resistivity in Nd2(Mo1-xNbx)2O7 with spin chirality
Scaling of anomalous hall resistivity in Nd2(Mo1-xNbx)2O7 with spin chirality
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DOI：
10.1103/physrevlett.99.077202
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发表时间：
2007-08-17
影响因子：
8.6
通讯作者：
Tokura, Y.
中科院分区：
文献类型：
--
作者：
Iguchi, S.;Hanasaki, N.;Tokura, Y.
我们研究了具有自旋手性的焦绿石型Nd-2(Mo1-xNbx)(2)O-7的异常霍尔电阻率与纵向电阻率（rho(xx)）的标度。导电电子在Mo亚晶格上的散射速率可以随x的变化而变化，从带输运到极化子跳变，同时保持Nd矩的二进二出结构不变。由Mo自旋手性引起的霍尔电阻率异常部分(rho（chi)(H)）表现出明显的标度行为，rho(xx) (rho(chi)(H)与rho（0.39)（xx）成比例），这与最近基于跳变传导区Berry相机制的理论结果一致。
We have investigated scaling of anomalous Hall resistivity with longitudinal resistivity (rho(xx)) in pyrochlore type Nd-2(Mo1-xNbx)(2)O-7 with spin chirality. Scattering rate of the conduction electron on the Mo sublattice can be varied with x from band transport to polaron hopping, while keeping the two-in-two-out structure of the Nd moments intact. The anomalous part of the Hall resistivity arising from the Mo spin chirality (rho(chi)(H)) shows a clear scaling behavior with rho(xx) (rho(chi)(H)proportional to rho(0.39)(xx)), in accord with a recent theoretical result based on the Berry phase mechanism in the hopping conduction regime.