Characteristics of multi-quantum-well laser diodes with surface electrode structure directly bonded to InP template on SiO2/Si substrate
Characteristics of multi-quantum-well laser diodes with surface electrode structure directly bonded to InP template on SiO2/Si substrate
复制标题
SiO2/Si衬底上直接键合InP模板表面电极结构多量子阱激光二极管的特性
DOI：
10.1002/pssa.202000767
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
and K. Shimomura
中科院分区：
文献类型：
--
作者：
X. Han;K. Tsushima;T. Shirai;T. Ishizaki;and K. Shimomura
研究了使用亲水键合方法在与 SiO2/Si 衬底键合的 InP 模板上生长的分离约束异质结构多量子阱 (SCH-MQW) 激光二极管 (LD) 的激光特性。 SCH 七量子阱结构 LD 的各层通过低压金属有机气相外延生长。在对表面电极结构的高台面波导脉冲电源进行测试后，发现在InP/SiO2/Si衬底上生长的LD比在InP/Si衬底上生长的LD表现出更优异的激光特性，并且阈值电流密度与在InP衬底上生长的表面电极结构LD相当。将在InP/SiO2/Si衬底上生长的LD的斜率效率与在InP/Si衬底上生长的LD的斜率效率进行比较。
The lasing characteristics of separate‐confinement‐heterostructure multi‐quantum‐well (SCH‐MQW) laser diodes (LDs) grown on InP templates bonded to a SiO2/Si substrate using the hydrophilic bonding method are investigated. The layers of the SCH seven‐quantum‐well‐structured LD are grown by low‐pressure metal–organic vapor‐phase epitaxy. After the pulsed power supply of a high‐mesa waveguide is tested with a surface electrode structure, the LD grown on an InP/SiO2/Si substrate is found to exhibit superior lasing characteristics compared to an LD grown on an InP/Si substrate, and the threshold current density is equivalent to that of a surface‐electrode‐structured LD grown on an InP substrate. The slope efficiency of the LD grown on the InP/SiO2/Si substrate is compared with that of an LD grown on an InP/Si substrate.