Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability
Narrow‐Band Thermal Emitter with Titanium Nitride Thin Film Demonstrating High Temperature Stability
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DOI：
10.1002/adom.201900982
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发表时间：
2020-02
影响因子：
9
通讯作者：
Zih‐Ying Yang;S. Ishii;A. T. Doan;S. Shinde;T. D. Dao;Yu-Ping Lo;Kuo‐Ping Chen;T. Nagao
中科院分区：
文献类型：
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作者：
Zih‐Ying Yang;S. Ishii;A. T. Doan;S. Shinde;T. D. Dao;Yu-Ping Lo;Kuo‐Ping Chen;T. Nagao
通过在氮化钛(TiN)薄膜和分布布拉格反射器(DBR)之间的Tamm等离子体激元(TPP)激发，实验实现了一种耐火波长选择热发射器。在实验中，吸收系数在≈为3.73μm处接近均匀，带宽为0.36μm。常温和真空中的高温稳定性分别高达500℃和1000℃。当TiN TPP结构与TiN绝缘体TiN(TiN金属绝缘体金属(MIM))结构相比时，前者表现出较高的Q因子，这表明选择TiN TTP结构相对于MIM结构具有优势。所提出的耐火TiN TPP结构是一种免光刻和可扩展的结构，为大规模热发射器件的实用化铺平了道路。
A refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.