Spin-dependent electron transport at the ferromagnet/semiconductor interface
Spin-dependent electron transport at the ferromagnet/semiconductor interface
复制标题
铁磁体/半导体界面处的自旋相关电子传输
DOI：
10.1063/1.369925
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发表时间：
1999
影响因子：
3.2
通讯作者：
J. Bland
中科院分区：
文献类型：
--
作者：
A. Hirohata;Yongbing Xu;C. M. Guertler;J. Bland
通过测量通过界面的光子激发电流的偏置依赖性，研究了铁磁物质/半导体界面上自旋相关的电子输运。使用圆偏振激光束来激发具有垂直于膜平面的自旋偏振的电子。在3 nm Au/5 nm Ni 80 Fe 20/GaAs（110）形式的样品中，检测到显著的输运电流，其幅度取决于自旋极化和磁化矢量的相对取向。在垂直饱和时，观察到的光电流的偏置依赖性的变化范围为0.7-0.8 eV的螺旋度时，被逆转。
A search for spin-dependent electron transport at the ferromagnet/semiconductor interface has been made by measuring the bias dependence of a photon excited current through the interface. A circularly polarized laser beam was used to excite electrons with a spin polarization perpendicular to the film plane. In samples of the form 3 nm Au/5 nm Ni80Fe20/GaAs (110), a significant transport current was detected with a magnitude dependent on the relative orientation of the spin polarization and the magnetization vector. At perpendicular saturation, the bias dependence of the photocurrent is observed to change in the range 0.7–0.8 eV when the helicity is reversed.