Photoelectron angular distributions
Photoelectron angular distributions
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DOI：
10.1103/physreva.17.1061
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发表时间：
1978-03
影响因子：
2.9
通讯作者：
H. Tseng;R. H. Pratt;Simon S. Yu;A. Ron
中科院分区：
文献类型：
--
作者：
H. Tseng;R. H. Pratt;Simon S. Yu;A. Ron
相对论，多极，和屏蔽效应的光电子角分布研究使用数值分波单电子跃迁代码以前应用于总截面。我们提供了非相对论偶极子近似的相对论和更高多极修正的发展数据，表明这些效应不能很好地用1+ 4 β cos θ这样简单的因子来描述，事实上在高Z元素中持续到阈值。随着能量的增加，我们跟踪屏蔽效应对分布的消失，因为屏蔽变成了对总截面的简单乘法归一化效应，因此讨论了参数化角分布数据的方法。最后，我们将理论与现有的实验进行比较，包括与100 eV能量及以上的所有实验进行全面比较。
Relativistic, multipole, and screening effects on photoelectron angular distributions are examined using the numerical partial-wave single-electron-transition code previously applied to total cross sections. We present data on the development of relativistic and higher-multipole corrections to the nonrelativistic dipole approximation, showing that these effects are not well described by such simple factors as 1+ 4 β cos θ and in fact persist to threshold in high-Z elements. We trace the disappearance of screening effects on the distribution with increasing energy as screening becomes simply a multiplicative normalization effect on the total cross section, and so discuss ways to parametrize angular-distribution data. Finally, we compare theory with existing experiments, including a comprehensive comparison with all experiments at 100-eV energies and above.