Tetsuo ENDOH: "The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation" IEICE TRANSACTIONS ON ELECTRONICS. E81-C・No.9. 1491-1498 (1998)
Tetsuo ENDOH: "The Analysis of the Stacked-Surrounding Gate Transistor(S-SGT)DRAM for the High Speed and Low Voltage Operation" IEICE TRANSACTIONS ON ELECTRONICS. E81-C・No.9. 1491-1498 (1998)
复制标题
Tetsuo ENDOH:“用于高速和低电压操作的堆叠式环绕栅极晶体管(S-SGT)DRAM 的分析”IEICE TRANSACTIONS ON ELECTRONICS E81-C·No.9(1998)。
DOI:
--
复制
发表时间:
--
期刊:
影响因子:
--
通讯作者:
中科院分区:
文献类型:
--
作者: