Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
Au:Ga Alloyed Clusters to Enhance Al Contacts to P-type GaN
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Au:Ga 合金团簇可增强 Al 与 P 型 GaN 的接触
DOI：
10.1109/rapid.2018.8508914
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
E. Kohn
中科院分区：
文献类型：
--
作者：
A. Klump;F. Kaess;B. Sarkar;R. Kirste;R. Collazo;P. Reddy;S. Mita;Z. Sitar;M. H. Breckenridge;E. Kohn
p型GaN膜上的Au的沉积、退火和随后的去除降低了随后沉积的Al金属接触的电阻率。的减少被解释为形成的Au：Ga合金，从表面去除Ga，并创建围绕电活性合金簇的Ga空位。
Deposition, annealing, and subsequent removal of Au on p-type GaN films reduced the resistivity of subsequently deposited Al metal contacts. The reduction is explained by formation of Au:Ga alloys which remove Ga from the surface, and create Ga-vacancies that surround the electrically active alloy clusters.