Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer
Reduction of the magnetic dead layer and observation of tunneling magnetoresistance in La0.67Sr0.33MnO3-based heterostructures with a LaMnO3 layer
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DOI：
10.1063/1.4984297
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发表时间：
2017-05-22
影响因子：
4
通讯作者：
Ohya, Shinobu
中科院分区：
文献类型：
--
作者：
Matou, Tatsuya;Takeshima, Kento;Ohya, Shinobu
在钙钛矿氧化物La 0.67Sr 0.33MnO 3（LSMO）的界面处形成磁死层是其自旋电子学应用的关键问题之一。在这封信中，我们报告的死层减少生长LSMO上的LaMnO 3（LMO）层。此外，我们还在LSMO/LMO/LSMO异质结中探测到了隧穿磁电阻效应。所得到的TMR符号为负，但退火后变为正。这种不寻常的负TMR可以归因于LMO上下界面之间的内在结构差异，并且可以通过在上LSMO/LMO界面处形成的弱反铁磁金属薄层来理解。该层被认为是由扩散的Sr原子和LMO势垒中的氧空位形成的。我们的研究结果表明，控制原子在界面处的混合是控制TMR的关键。由AIP出版社出版。
The formation of a magnetic dead layer at the interfaces of the perovskite oxide La0.67Sr0.33MnO3 (LSMO) is one of the crucial issues for its spintronic applications. In this letter, we report the reduction of the dead layer by growing LSMO on a LaMnO3 (LMO) layer. Furthermore, we detect tunneling magnetoresistance (TMR) in an LSMO/LMO/LSMO heterostructure. The obtained sign of the TMR was negative, but it changed to positive after annealing. This unusual negative TMR can be attributed to the intrinsic structural difference between the upper and lower interfaces of LMO and can be understood by a weak antiferromagnetic metallic thin layer formed at the upper LSMO/LMO interface. This layer is thought to be formed by diffused Sr atoms and oxygen vacancies in the LMO barrier. Our results indicate that control of intermixing of atoms at the interfaces is a key to controlling the TMR. Published by AIP Publishing.