Observation of acoustoelectric effect in micromachined lamb wave delay lines with AlGaN/GaN heterostructure
Observation of acoustoelectric effect in micromachined lamb wave delay lines with AlGaN/GaN heterostructure
复制标题
AlGaN/GaN 异质结构微机械兰姆波延迟线的声电效应观察
DOI：
10.1109/iedm.2016.7838487
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
M. Rais
中科院分区：
文献类型：
--
作者：
H. Zhu;A. Ansari;W. Luo;M. Rais
报道了在AlGaN/GaN异质结中首次观测到声兰姆波与二维电子气相互作用的声电效应。微制造的兰姆波延迟线用于发射和引导行进声波通过2DEG区域，导致位于延迟线上的两个欧姆接触之间的DC电流流动。兰姆波延迟线的声传输效率明显优于传统的声表面波延迟线。验证了声发射电流与射频功率和频率的关系。
We report on the first time observation of acoustoelectric (AE) effect from the interaction of acoustic Lamb waves and two-dimensional electron gas (2DEG) in an AlGaN/GaN heterostructure. Micro-fabricated Lamb wave delay lines are used to launch and guide travelling acoustic waves through the 2DEG region, resulting in a DC current flow between two ohmic contacts positioned on the delay line. The Lamb wave delay line shows much better acoustic transmission efficiency than the conventional surface acoustic wave (SAW) counterpart. The dependence of AE current on RF power and frequency is also verified.