Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN
Effect of growth temperature and Si doping on the microstructure of GaN thin films grown on high temperature GaN
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生长温度和Si掺杂对高温GaN上生长的GaN薄膜微观结构的影响
DOI：
10.1002/pssc.200303484
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
JunHo Kim
中科院分区：
文献类型：
--
作者：
K. Son;Dong;H. Cho;Kyuhan Lee;Sunwoon Kim;Keunseop Park;JunHo Kim
研究了生长温度和Si掺杂对高温GaN基GaN薄膜结构特性的影响。GaN/GaN同质结结构通过MOCVD在中间温度（IT，840 °C）下以各种Si掺杂浓度生长。通过AFM形貌分析，在IT生长的未掺杂GaN表面上观察到V形凹坑。TEM双束像表明，只有螺型和混合型位错成分有助于坑的形成。适度的Si掺杂降低了凹坑密度，但是Si的过度掺杂通过再次形成凹坑而劣化IT-GaN性质。并不是所有的凹坑都与穿透位错有关，但在高Si掺杂GaN的无位错区观察到了一些凹坑。（© 2003 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Effects on structural characteristics of growth temperature and Si doping in GaN thin films grown on high temperature GaN were investigated. The GaN/GaN homojunction structure was grown via MOCVD at intermediate temperature (IT, 840 °C) with various Si doping concentrations. V-shaped pits are observed on the surface of the undoped GaN grown at IT by AFM morphology analysis. TEM two beam images show that only screw- and mixed-type components of dislocations contribute to pit formation. Moderate Si doping reduces the pit density, but over-doping of Si deteriorates the IT-GaN property by forming pits again. Not all pits are related with threading dislocations but some of them are observed in the dislocation free area of high Si-doped GaN. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)